Indium can be grown on Si(111) in a 4 x I pattern that contains rows of In atoms spaced 13.3 Angstrom apart that have quasi-one-dimensional electronic structure. This ordered array of metallic wires produces an image-induced ...

Using photoemission and inverse photoemission, it has recently been demonstrated that single domain Si(111)-In(4 X 1) overlayers possess a clear Fermi level crossing at approximate to 0.6 azimuth of the 1 x I zone, which ...