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Strongly anisotropic band dispersion of an image state located above metallic nanowires
Indium can be grown on Si(111) in a 4 x I pattern that contains rows of In atoms spaced 13.3 Angstrom apart that have quasi-one-dimensional electronic structure. This ordered array of metallic wires produces an image-induced ...
Detection of a Fermi level crossing in three-domain Si(111)-In(4x1)
Using photoemission and inverse photoemission, it has recently been demonstrated that single domain Si(111)-In(4 X 1) overlayers possess a clear Fermi level crossing at approximate to 0.6 azimuth of the 1 x I zone, which ...